Perebeinos V, Rotkin S V, Petrov A G, et al.
#Complementary metal oxide silicon free
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A carbon nanotube non-volatile memory device using a photoresist gate dielectric. Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates. Adv Funct Mater, 2019, 29: 1905518Ĭao Q, Kim H, Pimparkar N, et al. Wafer-scale high-yield manufacturing of degradable electronics for environmental monitoring. Low-power carbon nanotube-based integrated circuits that can be transferred to biological surfaces. High-performance carbon nanotube complementary electronics and integrated sensor systems on ultrathin plastic foil. Nanomaterials in transistors: from high-performance to thin-film applications. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2017. System scaling for intelligent ubiquitous computing. Carbon nanotubes for high-performance logic. Mater Today, 2014, 17: 433–442Ĭhen Z H, Wong H S P, Mitra S, et al. Carbon nanotube electronics: recent advances. Nanotube electronics for radiofrequency applications. Nanotube electronics and optoelectronics. Science and engineering beyond Moore’s law. Turning potential into realities: the invention of the integrated circuit (Nobel lecture). Finally, the challenges and pathways for nanotube transistors to transition into commercial applications are discussed. This paper reviews the latest advancements in CNT-based electronics research. Due to its excellent electrical properties and intrinsic nano-scale size, CNT has been considered by academia and industry to have great potential to replace silicon materials in the future for the extremely scaled technology nodes or novel electronic applications. In 1991, Iijima discovered carbon nanotubes (CNTs). By looking for thinner semiconductor materials with higher mobility as the active layer to construct smaller and higher-performance transistors, it is possible to further stimulate transistors and integrated circuits on performance, density, power dissipation, and functions. Material innovation is exerting an ever-greater role in the integrated circuit design. However, the development of Si CMOS technology is currently subject to serious challenges from various aspects such as physics limit, cost, and power consumption, and is becoming increasingly difficult. Over the last sixty years, the scaling of silicon-based complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) have promoted the rapid development of microelectronic technology.
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